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? semiconductor components industries, llc, 2002 august, 2002 rev. 2 1 publication order number: ncp1403/d ncp1403 15 v/30 ma pfm step-up dc-dc converter the ncp1403 is a monolithic pfm stepup dcdc converter. this device is designed to boost a single lithium or two cell aa/aaa battery voltage up to 15 v (with internal mosfet) output for handheld applications. a pullup chip enable feature is built with this device to extend batteryoperating life. besides, the device can also be incorporated in stepdown, and voltageinverting configurations. this device is available in spacesaving tsop5 package. features ? 82% efficiency at v out = 15 v, i out = 50 ma, v in = 5.0 v ? 78% efficiency at v out = 15 v, i out = 30 ma, v in = 3.6 v ? low operating current of 19 a (no switching) ? low shutdown current of 0.3 a ? low startup voltage of 1.3 v typical at 0 ma ? output voltage up to 15 v with builtin 16 v mosfet switch ? pfm switching frequency up to 300 khz ? chip enable ? low profile and minimum external parts ? micro miniature tsop5 package typical applications ? lcd bias ? personal digital assistants (pda) ? digital still camera ? handheld games ? handheld instrument tsop5 case 483 sn suffix 1 pin connections and marking diagram 1 dce = device marking y = year w = work week (top view) http://onsemi.com 5 2 34 5 dceyw ce fb vdd gnd lx device package shipping ordering information ncp1403snt1 tsop5 3000/t ape & reel
ncp1403 http://onsemi.com 2 figure 1. typical stepup application circuit 1 ncp1403 gnd 4 lx 5 vdd 3 fb 2 ce 1 + enable v in 1.8 v to 5.5 v c 1 10 f l 47 h d mbr0520lt1 750 pf to 2000 pf c c r fb1 r fb2 + c 2 33 f v out 15 v v out 0.8
r fb1 r fb2 1 figure 2. typical stepup application circuit 2 ncp1403 gnd 4 lx 5 vdd 3 fb 2 ce 1 enable v in 2.7 v to 5.5 v c 1 4.7 f 10 v l 22 h d mbr0520lt1 c 2 2.2 f 16 v i led 0.8 v r s white led x 4 r s figure 3. representative block diagram + - pfm comparator pfm on/off timing control vlx limit uvlo soft start vref lx vdd ce gnd fb driver
ncp1403 http://onsemi.com 3 pin function descriptions pin symbol description 1 ce chip enable pin (1) the chip is enabled if a voltage which is equal to or greater than 0.9 v is applied. (2) the chip is disabled if a voltage which is less than 0.3 v is applied. (3) the chip will be enabled if it is left floating. 2 fb pfm comparator inverting input, and is connected to offchip resistor divider which sets output voltage. 3 vdd power supply pin for internal circuit. 4 gnd ground pin. 5 lx external inductor connection pin. maximum ratings rating symbol value unit power supply voltage (pin 3) v dd 0.3 to 6.0 v input/output pin lx (pin 5) lx peak sink current fb (pin 2) v lx i lx v fb 0.3 to 16.0 600 0.3 to 6.0 v ma v ce (pin 1) input voltage range input current range v ce i ce 0.3 to 6.0 150 v ma power dissipation and thermal characteristics maximum power dissipation @ t a = 25 c thermal resistance junctiontoair p d r ja 500 250 mw c/w operating ambient temperature range t a 40 to +85 c operating junction temperature range t j 40 to +150 c storage temperature range t stg 55 to +150 c 1. this device series contains esd protection and exceeds the following tests: human body model (hbm) 2.0 kv per jedec standard: jesd22a114 for all pins except lx pin. human body model (hbm) 1.5 kv for lx pin. machine model (mm) 200 v per jedec standard: jesd22a115 for all pins. 2. latchup current maximum rating: 150 ma per jedec standard: jesd78. 3. moisture sensitivity level (msl): 1 per ipc/jedec standard: jstd020a.
ncp1403 http://onsemi.com 4 electrical characteristics (v out = 15 v, t a =25 c, for min/max values unless otherwise noted.) characteristic symbol min typ max unit on/off timing control minimum off time (v dd = 3.0 v, v fb = 0 v) t off 0.8 1.3 1.5 s maximum on time (current not asserted) t on 4.0 6.0 8.4 s maximum duty cycle d max 75 83 91 % minimum startup voltage (i out = 0 ma) v start 1.3 1.8 v minimum startup voltage temperature coefficient (t a = 40 to +85 c) dv start 1.6 mv/ c minimum supply voltage (i out = 0 ma) v hold 1.2 1.7 v softstart time t ss 0.5 10 ms lx (pin 5) internal switch voltage (note 4) v lx 0.5 16 v lx pin onstate sink current (v lx = 0.4 v, v dd = 3.0 v) i lx 100 130 ma voltage limit (when v lx reaches v lxlim , the lx switch is turned off by the lx switch protection circuit) v lxlim 0.55 0.75 1.0 v offstate leakage current (v lx = 16 v) i lkg 0.1 1.0 a ce (pin 1) ce input voltage (v dd = 3.0 v, v fb = 0 v) high state, device enabled low state, device enabled v ce(high) v ce(low) 0.9 0.3 v v ce input current high state, device enabled (v dd = v ce = 5.5 v) low state, device enabled (v dd = 5.5 v, v ce = v fb = 0 v) i ce(high) i ce(low) 0.5 0.5 0 0.1 0.5 0.5 a a total device supply voltage v dd 1.2 5.5 v feedback voltage v fb 0.76 0.8 0.84 v feedback pin bias current (v fb = 0.8 v) i fb 15 30 na operating current 1 (v fb = 0 v, v dd = v ce = 3.0 v) i dd1 130 200 a operating current 2 (v dd = v ce = v fb = 3.0 v, not switching) i dd2 19 25 a offstate current (v dd = 5.0 v, v ce = 0 v, internal 10m pullup resistor) i off 0.3 0.8 a 4. recommend maximum v out up to 15 v.
ncp1403 http://onsemi.com 5 typical characteristics figure 4. output voltage versus output current (v out = 15 v) figure 5. efficiency versus output current (v out = 15 v) i out , output current (ma) i out , output current (ma) 70 60 50 40 30 20 10 0 13.0 13.5 14.0 14.5 15.0 15.5 16.0 17.0 70 60 50 40 30 20 10 0 0 20 40 60 100 figure 6. output voltage versus output current (v out = 12 v) figure 7. efficiency versus output current (v out = 12 v) figure 8. output voltage versus input voltage (v out = 15 v) figure 9. output voltage versus input voltage (v out = 12 v) v in , input voltage (v) 6.0 5.5 3.5 3.0 2.5 2.0 14.4 14.6 14.8 15.0 15.4 v out , output voltage (v) 80 80 80 efficiency (%) 15.2 v out , output voltage (v) 16.5 l = 47 h v out = 15 v c out = 33 f t a = 25 c figure 1 l = 47 h v out = 15 v c out = 33 f t a = 25 c figure 1 v in = 5.5 v 5.0 v 4.0 v 3.6 v 3.0 v 2.4 v 1.8 v v in = 5.5 v 5.0 v 4.0 v 3.6 v 3.0 v 2.4 v 1.8 v 5.0 4.5 4.0 l = 47 h v out = 15 v c out = 33 f t a = 25 c figure 1 i out = 5 ma i out = 0 ma v in , input voltage (v) 6.0 5.5 3.5 3.0 2.5 2.0 11.4 11.6 11.8 12.0 12.4 12.2 v out , output voltage (v) 5.0 4.5 4.0 l = 47 h v out = 12 v c out = 33 f t a = 25 c figure 1 i out = 5 ma i out = 0 ma i out , output current (ma) 70 60 50 40 30 20 10 0 20 40 60 100 80 80 efficiency (%) l = 47 h v out = 12 v c out = 33 f t a = 25 c figure 1 v in = 5.5 v 5.0 v 4.0 v 3.6 v 3.0 v 2.4 v 1.8 v i out , output current (ma) 70 60 50 40 30 20 10 0 10.0 10.5 11.0 11.5 12.0 12.5 13.0 14.0 v out , output voltage (v) 80 13.5 l = 47 h v out = 12 v c out = 33 f t a = 25 c figure 1 v in = 5.5 v 5.0 v 4.0 v 3.6 v 3.0 v 2.4 v 1.8 v
ncp1403 http://onsemi.com 6 typical characteristics figure 10. no load input current versus input voltage figure 11. current limit versus input voltage v in , input voltage (v) v in , input voltage (v) 6 5 4 3 2 1 0 100 200 300 400 500 6 5 4 3 2 1 0 100 200 300 600 figure 12. switchon resistance versus input voltage figure 13. startup/hold voltage versus output current v in , input voltage (v) t a , ambient temperature (ma) 6 5 4 3 2 1 2 3 4 6 30 8 6 4 2 0 0.5 1.0 1.5 4.0 4.5 5.0 figure 14. feedback voltage versus ambient temperature figure 15. maximum duty cycle versus ambient temperature t a , ambient temperature( c) t a , ambient temperature ( c) 100 75 50 25 0 25 50 0.74 0.76 0.78 0.80 0.84 100 75 50 25 0 25 50 50 60 70 80 90 100 i in , no load input current ( a) 500 i lim , current limit (ma) r ds(on) , switchon resistance ( ) v start /v hold , startup/hold voltage (v) 0.82 v fb , feedback voltage (v) d max , maximum duty cycle (%) 5 600 700 800 900 1000 v out = 15 v l = 47 h d = mbr0520lt1 c in = 10 f c out = 33 f i out = 0 ma t a = 25 c figure 1 t a = 25 c 400 1 v out = 15 v t a = 25 c 16 14 12 10 20 18 28 26 24 22 2.5 3.0 3.5 2.0 v out = 15 v l = 47 h c out = 33 f t a = 25 c figure 1 v start v hold
ncp1403 http://onsemi.com 7 typical characteristics figure 16. maximum switch on time figure 17. minimum switch off time t a , ambient temperature ( c) t a , ambient temperature ( c) 100 75 50 25 0 25 50 4 5 6 7 8 9 100 75 50 25 0 25 50 0 1 2 3 5 figure 18. operating current 1 versus ambient temperature figure 19. operating current 2 versus ambient temperature figure 20. offstate current versus ambient temperature figure 21. ce high input current versus ambient temperature t on , maximum switch on time ( s) 4 t off , minimum switch off time ( s) t a , ambient temperature ( c) t a , ambient temperature ( c) 100 75 50 25 0 25 50 70 90 110 130 150 170 100 75 50 25 0 25 50 15 17 19 21 25 i dd1 , operating current 1 ( a) 23 i dd2 , operating current 2 ( a) t a , ambient temperature ( c) t a , ambient temperature ( c) 100 75 50 25 0 25 50 0 0.2 0.4 0.6 0.8 1 100 75 50 25 0 25 50 25 15 5 5 25 i off, offstate current ( a) 15 i ce(high) , ce high input current (na) v dd = v ce = 3.0 v v fb = 0 v v dd = v ce = 3.0 v v fb = 3.0 v not switching v dd = 5.0 v v ce = 0 v v dd = 5.5 v v ce = 5.5 v
ncp1403 http://onsemi.com 8 figure 22. startup waveforms figure 23. chip enable waveforms figure 24. line transient response figure 25. load transient response figure 26. operating waveforms (medium load) figure 27. operating waveforms (heavy load) l = 47 h, c in = 10 f, c out = 33 f, v in = 3.6 v, i out = 20 ma 1. v out = 15 v, 10 v/div 2. v lx , 10 v/div 3. v ce = 0 v to 3.3 v, 5 v/div l = 47 h, c in = 10 f, c out = 33 f, i out = 20 ma 1. v out = 15 v, 10 v/div 2. v lx , 10 v/div 3. v in = 0 v to 3.6 v, 5 v/div l = 47 h, c in = 10 f, c out = 33 f, i out = 10 ma 1. v out = 15 v (ac coupled), 100 mv/div 2. v in = 3.6 v to 5.5 v, 2.0 v/div l = 47 h, c in = 10 f, c out = 33 f, v in = 3.6 v 1. v out = 15 v (ac coupled), 50 mv/div 2. i out = 1.0 ma to 15 ma, 10 ma/div l = 47 h, c in = 10 f, c out = 33 f, v in = 3.6 v, v out = 15 v, i out = 10 ma 1. v lx , 5.0 v/div 2. i l , 200 ma/div 3. v ripple , 50 mv/div l = 47 h, c in = 10 f, c out = 33 f, v in = 3.6 v, v out = 15 v, i out = 30 ma 1. v lx , 5.0 v/div 2. i l , 200 ma/div 3. v ripple , 50 mv/div typical characteristics
ncp1403 http://onsemi.com 9 detailed operating description operation the ncp1403 is monolithic dcdc switching converter optimized for single lithium or two cells aa/aaa size batteries powered portable products. the ncp1403 device consists of startup circuit, chip enable circuit, pfm comparator, voltage reference, pfm on/off timing control circuit, driver, current limit circuit, and opendrain mosfet switch. the device operating current is typically 130 a, and can be further reduced to about 0.3 a when the chip is disabled (v ce < 0.3v). the operation of ncp1403 can be best understood by referring to the block diagram and typical application circuit 1 in figures 3 and 1. the pfm comparator monitors the output voltage via the external feedback resistor divider by comparing the feedback voltage with the reference voltage. when the feedback voltage is lower than the reference voltage, the pfm control and driver circuit turns on the nchannel mosfet switch and the current ramps up in the inductor. the switch will remain on for the maximum ontime, 6.0 s, or until the current limit is reached, whichever occurs first. the mosfet switch is then turned off and energy stored in the inductor will be discharged to the output capacitor and load through the schottky diode. the mosfet switch will be turned off for at least the minimum offtime, 1.3 s, and will remain off if the feedback voltage is higher than the reference voltage and output capacitor will be discharged to sustain the output current, until the feedback voltage is again lower than reference voltage. this switching cycle is then repeated to attain voltage regulation. soft start there is a soft start circuit in ncp1403. when power is applied to the device, the soft start circuit pumps up the output voltage to approximately 1.5 v at a fixed duty cycle, the level at which the converter can operate normally. with the soft start circuit, the output voltage overshoot is minimized and the startup capability with heavy loads is also improved. on/off timing control the maximum ontime is typically 6.0 s, whereas, the minimum offtime is typically 1.3 s. owing to the current limit circuit, the ontime can be shorter. the switching frequency can be up to 300 khz. voltage reference and output voltage the internal voltage reference is trimmed to 0.8 v at an accuracy of 5.0%. the voltage reference is connected to the noninverting input of the pfm comparator and the inverting input of the pfm comparator is connected to the fb pin. the output voltage can be set by connected an external resistor voltage divider from the v out to the fb pin. with the internal 16 v mosfet switch, the output voltage can be set between v in to 15 v. lx limit the lx limit is a current limit feature which is achieved by monitoring the voltage at the lx pin during the mosfet switch turnon period. when the switch is turned on, current ramps up in the inductor, and the voltage at the lx pin will increase according to the ohm's law due to the onstate resistance of the mosfet. when the vlx is greater than 0.75 v, the switch will be turned off. with the current limit circuit, saturation of inductor is prevented and output voltage overshoot during startup can also be minimized. nchannel mosfet switch the ncp1403 is builtin with a 16 v open drain nchannel mosfet switch which allows high output voltage up to 15 v to be generated from simple stepup topology. enable / disable operation the ncp1403 offers ic shutdown mode by the chip enable pin (ce pin) to reduce current consumption. an internal pullup resistor tied the ce pin to out pin by default i.e. user can float the pin ce for permanent aono. when voltage at pin ce is equal to or greater than 0.9 v, the chip will be enabled, which means the device is in normal operation. when voltage at pin ce is less than 0.3 v, the chip is disabled, which means ic is shutdown. during shutdown, the ic supply current reduces to 0.3 a and lx pin enters high impedance state. however, the input remains connected to the output through the inductor and the schottky diode, keeping the output voltage to one diode forward voltage drop below the input voltage.
ncp1403 http://onsemi.com 10 applications circuit information external component selection inductor the ncp1403 is designed to work well with a range of inductance values, the actual inductance value depends on the specific application, output current, efficiency, and output ripple voltage. for step up conversion, the device works well with inductance ranging from 22 h to 47 h. inductor with small dcr, usually less than 1 , should be used to minimize loss. it is necessary to choose an inductor with saturation current greater than the peak switching current in the application. if 22 h inductance is used, lower profile surface mount inductor can be selected for the same current rating. moreover, it permits the converter to switch at higher frequency up to 300 khz since the inductor current will ramp up faster and hit the current limit at a shorter time for smaller inductance value. however, current output are slightly lower because the offtime is limited by the minimum offtime. if 47 h inductance is selected, higher efficiency and output current capability are achieved, but the converter will switch at a lower frequency and the inductor size will be slightly larger for the same current rating. for lower inductance value, the inductor current rampdown time will be shorter than the minimum offtime. consequently, the converter can only operate in discontinuous conduction mode and lower output current can be generated. for higher inductance value, if the inductance is sufficiently large, the maximum ontime will expire before the current limit is reached. as a result, the available output power and output current are reduced. besides, instability may occur when operation enters ccm. to ensure the current limit is reached before the maximum ontime expires, l can be selected according to the inequality below: l (v in v s ) i lim t on(max) where v s = 0.75 v which is the mosfet saturation voltage, and i lim is the current limit which can be referred to in figure 11, and t on(max) = 6.0 s. if the above condition is satisfied, i pk = i lim ; where i pk is the peak inductor current. then, stepup converter with inductor satisfy the following condition will operate in dcm only, i lim l (v out v d v in) t off(min) if the i pk = i lim , stepup converter with inductor satisfy the following condition will operate in ccm at maximum output current, i lim l (v out v d v in) t off(min) where v d is the schottky diode forward voltage drop, t off(min) = 1.3 s. for stepup converter operates in dcm only, the maximum output current can be calculated from the equation below: i out(max) (i lim ) 2 l 2(v out v d v in )

i lim l v in v s t off(min) for stepup converter operates in ccm, the maximum output current can be calculated from the equation below: i out(max)
i lim (v out v d v in )t off(min) 2l (v in v s) (v out v d v s ) diode the diode is the main source of loss in dcdc converters. the most importance parameters which affect their efficiency are the forward voltage drop, v f , and the reverse recovery time, t rr . the forward voltage drop creates a loss just by having a voltage across the device while a current flowing through it. the reverse recovery time generates a loss when the diode is reverse biased, and the current appears to actually flow backwards through the diode due to the minority carriers being swept from the pn junction. a schottky diode with the following characteristics is recommended: 1. small forward voltage, v f < 0.3 v 2. small reverse leakage current 3. fast reverse recovery time / switching speed 4. rated current larger than peak inductor current, i rated > i pk 5. reverse voltage larger than output voltage, v reverse > v out input capacitor the input capacitor can stabilize the input voltage and minimize peak current ripple from the source. the value of the capacitor depends on the impedance of the input source used. small esr (equivalent series resistance) tantalum or ceramic capacitor with value of 10 f should be suitable. output capacitor the output capacitor is used for sustaining the output voltage when no current is delivering from the input, and smoothing the ripple voltage. low esr tantalum capacitor should be used to reduce output ripple voltage since the output ripple voltage is dominated by the esr value of the tantalum capacitor. in general, a 22 f to 47 f low esr (0.2 to 0.4 ) tantalum capacitor should be appropriate. the output ripple voltage can be approximately given by the following equation: v ripple (i pk i out ) esr
ncp1403 http://onsemi.com 11 feedback resistors choose the rfb2 value from the range 10 k to 200 k for positive output voltage. the value of r fb1 can then be calculated from the equation below: r fb1 r fb2
v out 0.8 1 1% tolerance resistors should be used for both r fb1 and r fb2 for better v out accuracy. output voltage higher than 15 v ncp1403 can be used to generate output voltage higher than 15 v by adding an external high voltage nch mosfet in series with the internal mosfet switch as shown in figure 33. the draintosource breakdown voltage of the external mosfet must be at least 1 v higher than the output voltage. the diode d1 helps the external mosfet to turn off and ensures that most of the voltage across the external mosfet during the switchoff period. since the high voltage external mosfet is in series with the internal mosfet, higher break down voltage is achieved but the current capability is not increased. there is an alternative application circuit shown in figure 35 which can output voltage up to 30 v. for this circuit, a diodecapacitor chargepump voltage doubler constructed by d2, d3 and c1 is added. during the internal mosfet switchon time, the lx pin is shorted to ground and d2 will charge up c1 to the stepped up voltage at the cathode of d1. during the mosfet switchoff time, the voltage at v out will be almost equal to the double of the voltage at the cathode of d1. the v out is monitored by the fb pin via the resistor divider and can be set by the resistor values. since the maximum voltage at the cathode of d1 is 15 v, the maximum v out is 30 v. the value of c1 can be in the range of 0.47 f to 2.2 f. negative voltage generation the ncp1403 can be used to produce a negative voltage output by adding a diodecapacitor chargepump circuit (d2, d3, and c1) to the lx pin as shown in figure 32. the feedback voltage resistor divider is still connected to the positive output to monitor the positive output voltage and a small value capacitor is used at c2. when the internal mosfet switches off, the voltage at the lx pin charges up the capacitor through diode d2. when the mosfet switches on, the capacitor c1 is effectively connected like a reversed battery and c1 discharges the stored charges through the r ds(on) of the internal mosfet and d3 to charge up c out and builds up a negative voltage at v out . since the negative voltage output is not directly monitored by the ncp1403, the output load regulation of the negative output is not as good as the standard positive output circuit. the resistance values of the resistors of the voltage divider can be onetenth of those used in the positive output circuit in order to improve the regulation at light load. for the application circuit in figure 36, it is actually the combination of the application circuits in figures 32 and 33. stepdown converter ncp1403 can be configured as a simple stepdown converter by using the opendrain lx pin to drive an external pch mosfet as shown in figure 34. the resistor rgs is used to switch off the pch mosfet during the switchoff period. too small resistance value should not be used for r gs , otherwise, the efficiency will be reduced. white led driver the ncp1403 can be used as a constant current led driver which can drive up to 4 white leds in series as shown in figure 2. the led current can be set by the resistance value of rs. the desired led current can be calculated by the equation below: i led 0.8 r s moreover, the brightness of the leds can be adjusted by a d.c. voltage or a pwm signal with an additional circuit illustrated below: r2 d2 c1 0.1 f 820 pf c2 100 k r1 r s gnd dc/pwm signal to fb pin to led with this additional circuit, the maximum led current is set by the above equation. the value of r2 can be obtained by the following equation: r2 v max v d 0.8
(i led(max) i led(min) )r s r1 v max is the maximum voltage of the control signal, v d is the diode forward voltage, i led(max) is the maximum led current and i led(min) is the minimum led current. if a pwm control signal is used, the signal frequency from 4 khz to 40 khz can be applied.
ncp1403 http://onsemi.com 12 pcb layout hints the schematic, pcb trace layout, and component placement of the stepup dcdc converter demonstration board are shown in figure 28 to figure 31 for pcb layout design reference. grounding one point grounding should be used for the output power return ground, the input power return ground, and the device switch ground to reduce noise. the input ground and output ground traces must be thick and short enough for current to flow through. a ground plane should be used to reduce ground bounce. power signal traces low resistance conducting paths should be used for the power carrying traces to reduce power loss so as to improve efficiency (short and thick traces for connecting the inductor l can also reduce stray inductance). besides, the length and area of all the traces with connection to the lx pin should be minimized. e.g., short and thick traces listed below should be used in the pcb: 1. trace from vin to l 2. trace from l to lx pin of the ic 3. trace from l to anode pin of schottky diode 4. trace from cathode pin of schottky diode to v out . external feedback resistors feedback resistors should be located as close to the fb pin as possible to minimize noise picked up by the fb pin. the ground connection of the feedback resistor divider should be connected directly to the gdn pin. input capacitor the input capacitor should be located close to both the v in to the inductor and the v dd pin of the ic. output capacitor the output capacitor should be placed close to the output terminals to obtain better smoothing effect on output ripple voltage. figure 28. stepup converter demonstration board schematic ncp1403 gnd 4 lx 5 vdd 3 fb 2 ce 1 tp1 v in 1.8 v to 5.0 v c1 10 f l1 47 h c3 r1 r2 + c2 33 f tp3 v out 15 v d1 mbr0520lt1 tp4 gnd + enable tp2 gnd
ncp1403 http://onsemi.com 13 figure 29. stepup converter demonstration board top layer copper figure 30. stepup converter demonstration board bottom layer copper figure 31. stepup converter demonstration board top layer component silkscreen
ncp1403 http://onsemi.com 14 components supplier parts supplier part number description phone l1 sumida electric co. ltd. cd43470kc inductor 47 h (852) 28806688 d1 on semiconductor mbr0520lt1 schottky power rectifier (852) 26890088 c1 kemet electronics corp. t494a106k010as low esr tantalum capacitor 10 f/10 v (852) 23051168 c2 kemet electronics corp. t494c336k016as low esr tantalum capacitor 33 f/16 v (852) 23051168
ncp1403 http://onsemi.com 15 other applications figure 32. positivetonegative output converter for negative lcd bias ncp1403 gnd 6 lx 5 vdd 3 fb 2 ce 1 + v in 2.0 v to 5.5 v c1 10 f l 47 h mbr0520lt1 x 2 3000 pf r fb1 r fb2 + c4 v out 15 v v out 0.8
r fb1 r fb2 1 1 0.1 f c3 2.2 f d1 mbr0520lt1 d2 d3 33 f 25 v c2 6 ma at v in = 2.0 v 40 ma at v in = 5.5 v c c l: cd43470kc, sumida c1: t494a106k010as, kemet c2: emk107bj104ma, taiyo y uden c3: gmk316f225zg, taiyo y uden c4: t494d336k025as, kemet d1, d2, d3: mbr0520lt1, on semiconductor figure 33. stepup dcdc converter with 29 v output voltage ncp1403 gnd 6 lx 5 vdd 3 fb 2 ce 1 + v in 3.0 v to 5.5 v c1 10 f 10 v l 47 h mbr0530t1 c c r fb1 r fb2 + c2 v out v out 0.8
r fb1 r fb2 1 d1 d2 mmsd914t1 22 f 35 v nths5402t1 q1 750 pf to 2000 pf up to 29 v mgsf1n03t1/ 6 ma at v in = 3.0 v 35 ma at v in = 5.5 v l: cd43470kc, sumida c1: t494a106k010as, kemet c2: t494d226k035as, kemet q1: mgsf1n03t1, on semiconductor nths5402t1, on semiconductor d1: mbr0530t1, on semiconductor d2: mmsd914t1, on semiconductor
ncp1403 http://onsemi.com 16 figure 34. stepdown dcdc converter with 1.6 v output voltage for dsp circuit ncp1403 gnd 6 lx 5 vdd 3 fb 2 ce 1 + v in 2.2 v to 4.2 v c1 22 f 10 v l 100 h mgsf1p02lt1 c c r fb1 r fb2 + c2 v out v out 0.8
r fb1 r fb2 1 q1 68 f 6 v d1 750 pf to 2000 pf 1.6 v mbr0520lt1 r gs 820 l: cd43101kc, sumida c1: t494c226k010as, kemet c2: t494d686k006as, kemet q1: mgsf1p02elt1, on semiconductor d1: mbr0520lt1, on semiconductor 200 ma at v in = 2.2 v figure 35. stepup dcdc converter with 30 v output voltage ncp1403 gnd 6 lx 5 vdd 3 fb 2 ce 1 v in 1.8 v to 5.5 v c1 10 f 10 v l 47 h mbr0520lt1 c c r fb1 r fb2 + c4 v out v out 0.8
r fb1 r fb2 1 d3 10 f 20 v d1 750 pf to 2000 pf 30 v mbr0520lt1 u1 c3 2.2 f d2 mbr0520lt1 + c2 10 f 20 v + l: cd43470kc, sumida c1: t494a106k010as, kemet c2, c4: t494d106k020as, kemet c3: gmk316f225zg, taiyo y uden d1, d2, d3: mbr0520lt1, on semiconductor 2 ma at v in = 1.8 v 35 ma at v in = 5.5 v
ncp1403 http://onsemi.com 17 figure 36. voltage inverting dcdc converter with 28 v output voltage ncp1403 gnd 6 lx 5 vdd 3 fb 2 ce 1 v in 3.5 v to 5.0 v c1 10 f 10 v l 47 h c c r fb1 r fb2 v out 0.8
r fb1 r fb2 1 1 750 pf to 2000 pf u1 mbr0530t1 x 2 v out d4 mmsd914t1 q1 d1 mmsd914t1 c2 1 f 50 v 2.2 f / 50 v c3 d2 d3 c4 22 f 35 v + + 28 v mgsf1n03t1/ nths5402t1 9 ma at v in = 3.3 v 20 ma at v in = 5.0 v + l: cd43470kc, sumida c1: t494a106k010as, kemet c2: umk212f105zg, taiyo y uden c3: gmk316f225zg, taiyo y uden c4: t494d226k035as, kemet q1: mgsf1n03t1, on semiconductor/ nths5402t1, on semiconductor d1, d2: mmsd914t1, on semiconductor d3, d4: mbr0530t1, on semiconductor figure 37. +15 v, 15 v outputs converter for lcd bias supply ncp1403 gnd 6 lx 5 vdd 3 fb 2 ce 1 v in 1.8 v to 5.5 v 10 f 10 v l1 47 h c3 r1 r2 v out1 0.8
r fb1 r fb2 1 750 pf to 2000 pf u1 mbr0520lt1 v out2 d3 mbr0520lt1 d1 c2 22 f 20 v 2.2 f c4 d2 c5 22 f 20 v + + 15 v 2 ma at v in = 1.8 v 5 ma at v in = 2.4 v 10 ma at v in = 3.0 v on l1: cd43470kc, sumida c1: t494a106k010as, kemet c2, c5: t494c226k020as, kemet c3: umk107b102kz, taiyo y uden c4: tmk316bj225ml, taiyo yuden d1, d2, d3: mbr0520lt1, on semiconductor r1: 390 k r2: 22 k v out2 v out1 0.3 mbr0520lt1 jpi off v out1 15 v 2 ma at v in = 1.8 v 5 ma at v in = 2.4 v 10 ma at v in = 3.0 v c1
ncp1403 http://onsemi.com 18 figure 38. +15 v, 7.5 v outputs converter for ccd supply circuit ncp1403 gnd 6 lx 5 vdd 3 fb 2 ce 1 v in 1.8 v to 5.5 v 10 f 10 v l1 47 h c3 r1 r2 v out1 0.8
r fb1 r fb2 1 750 pf to 2000 pf u1 mbr0520lt1 v out2 d4 mbr0520lt1 d2 c6 22 f 20 v 2.2 f c5 d3 c7 22 f 20 v + + 7.5 v 5 ma at v in = 3.0 v on l1: cd43470kc, sumida c1, c2: t494a106k010as, kemet c3: umk107b102kz, taiyo y uden c4, c5: tmk316bj225ml, taiyo y uden c6, c7: t494c226k020as, kemet d1, d2, d3, d4, d5: mbr0520lt1, on semiconductor r1: 390 k r2: 22 k v out2 v out1 2 mbr0520lt1 jpi off v out1 15 v 20 ma at v in = 3.0 v + c1 + c4 2.2 f c2 10 f 10 v mbr0520lt1 d1 mbr0520lt1 d5
ncp1403 http://onsemi.com 19 package dimensions tsop5 sn suffix case 48301 issue b notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. dim min max min max inches millimeters a 2.90 3.10 0.1142 0.1220 b 1.30 1.70 0.0512 0.0669 c 0.90 1.10 0.0354 0.0433 d 0.25 0.50 0.0098 0.0197 g 0.85 1.05 0.0335 0.0413 h 0.013 0.100 0.0005 0.0040 j 0.10 0.26 0.0040 0.0102 k 0.20 0.60 0.0079 0.0236 l 1.25 1.55 0.0493 0.0610 m 0 10 0 10 s 2.50 3.00 0.0985 0.1181 0.05 (0.002) 123 54 s a g l b d h c k m j
ncp1403 http://onsemi.com 20 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provid ed in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into t he body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. ncp1403/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada

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